s mhop microelectronics c orp. a stu/d413s symbol v ds v gs i dm e as w a p d c 27 -55 to 150 i d units parameter -40 -22 -66 v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj product summary v dss i d r ds(on) (m ) @ vgs=4.5v 48 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. p-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed a a sigle pulse avalanche energy c maximum power dissipation operating junction and storage temperature range t j , t stg ver 1.1 www.samhop.com.tw aug,24,2012 1 details are subject to change without notice. 50 c/w thermal resistance, junction-to-ambient r ja t c =25 c esd protected. g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) g g s s d d s t d s e ri e s to - 2 5 1 ( i - p a k ) 3 c/w thermal resistance, junction-to-case r jc 16 a t c =70 c -17.6 t c =70 c w 42 g r e r r p p r p p o r r
4 symbol min typ max units bv dss -40 v 1 i gss 10 ua v gs(th) -1 v 38 g fs 10 s v sd c iss 895 pf c oss 138 pf c rss 67 pf q g 14 nc 14 nc q gs 54 nc q gd 10 t d(on) 14.5 ns t r 2.1 ns t d(off) 3.4 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1.0a v gs =-10v r gen =3.3 ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-11a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-11a v ds =-10v , i d =-11a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs ,i d =-250ua v ds =-32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =-250ua reverse transfer capacitance on characteristics v gs =-4.5v , i d =-8.6a 48 58 78 m ohm f=1.0mhz v ds =-20v,i d =-11a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s = -2.0a -0.77 -1.3 v notes a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=0.5mh,v dd = 20v .(see figure13) stu/d413s ver 1.1 www.samhop.com.tw aug,24,2012 2 nc v ds =-20v,i d =-11a,v gs =-4.5v 7 _ _ b -1.8 -3 b
stu/d413s ver 1.1 www.samhop.com.tw aug,24,2012 3 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 tj( c) 75 25 50 v gs =-4.5v i d =-8.6a 125 150 v gs =-10v i d =-11a 120 100 80 60 40 20 1 1 4 8 12 16 20 15 12 9 6 3 0 0 0.8 4.8 4.0 3.2 2.4 1.6 125 c -55 c 25 c 20 16 12 8 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.2 1.1 1.0 0.9 0.8 0.7 0.6 125 150 v ds =v gs i d =-250ua 100 75 50 25 0 -25 -50 1.15 1.10 1.05 1.00 0.95 0.90 i d =-250ua 0.85 125 150 100 75 50 25 0 -25 -50 i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature v gs =-4.5v v gs =-10v v gs =-3v v gs =-4.5v v gs =-10v v gs =-3.5v v gs =-4v v gs =-5v
stu/d413s ver 1.1 www.samhop.com.tw aug,24,2012 4 120 100 80 60 40 20 0 24 68 10 0 i d =-11a 25 c 125 c 75 c r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage 20.0 10.0 1.0 125 5.0 0 0.24 0.48 0.72 0.96 1.20 25 c 75 c 125 c is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current 1500 1250 1000 750 500 250 0 0 5 10 15 20 25 30 crss css o css i c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance 10 8 6 4 2 0 v ds =-20v i d =-11a 036 9 12 15 18 21 24 v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge 100 10 60 600 vds =-20v,id=-1a vgs =-10v 1 1 6 10 60 100 600 300 td(off) td(on) tr tf switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 100 10 1 0.1 1 10 40 100 v gs =-10v single pulse t a =25 c r d s (o n) limit dc 10ms 1m s 100 u s
t p v (br )dss i as f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p ed in d u ct i ve stu/d413s www.samhop.com.tw aug,24,2012 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r e ja (t)=r (t) * r e ja 2. r e ja =s ee datas heet 3. t jm- t a =p dm *r e ja (t) 4. duty cycle, d=t 1 /t 2 single pulse ver 1.1 r g i as 0.01 t p d.u.t l v ds + - dd 20v v
stu/d413s ver 1.1 www.samhop.com.tw aug,24,2012 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 13.700 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 15.300 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.539 0.602 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d413s ver 1.1 www.samhop.com.tw aug,24,2012 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.780 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 10 symbols e1 4.320 5.004 0.170 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067 0 15 0 15
stu/d413s ver 1.1 www.samhop.com.tw aug,24,2012 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
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